Complete research data for: Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers

Full dataset supporting the publication "Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers".

This includes experimental results from 55,516 individual nanowire lasers using a multitude of experimental techniques, including: photoluminescence spectroscopy, time-correlated single photon counting, optical and electron-microscope imaging and interferometry. Nine different nanowire materials/designs were investigated: InP, GaAs, Zn doped GaAs, AlGaAs/GaAs, CdS, GaN, ZnO and two batches of GaAsP/GaAs.

The dataset includes raw data of each experiment, as well as metadata, and parameters extracted from data analysis of each nanowire. The parameters include: nanowire dimensions, optical bandgaps, carrier lifetimes, lasing thresholds and wavelengths, coherence lengths and cavity reflectivities.

The dataset enables correlations to be drawn between these independently measured parameters to assess the factors that influence the performance of the nanowire lasers. As discussed in the publication, it was found that it is the carrier lifetimes, and thus the properties of the gain medium, that have the largest impact on the performance.

This dataset is a demonstration of the holistic approach to characterisation of optoelectronic nanostructures/devices. The approach is modular and scalable by design, and therefore suitable for characterisation of other NWL material systems, whilst being widely applicable to emerging opto-electronic materials.