Data supporting publication entitled "Disentangling the impact of point defect density and carrier localisation enhanced Auger recombination on efficiency droop in (In,Ga)N/GaN quantum wells"
Phototluminescence intensity vs carrier density for three samples grown at different temperatures; Phototluminescence transients for these samples; Calculated radiative and Auger recombination coefficients.
Funding
Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)
Engineering and Physical Sciences Research Council