Raw transport data of 'Tunnel junctions based on interfacial 2D ferroelectrics'

<p dir="ltr">The documents provided are the raw transport data of figures 2c, 2d, 3a, 3b and 3c of the article 'Tunnel junctions based on interfacial two dimensional ferroelectrics'</p><p dir="ltr">This work explores the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. Well-pronounced ambipolar switching behaviour is observed in ferroelectric tunnelling junctions with composite ferroelectric/non-polar insulator barriers and our experimental results are supported with complementary theoretical modelling. Furthermore, the strong dependence of the switching behaviour on the underlying domain structure is revealed: to observe the polarisation reversal, at least one partial dislocation must be present in the device area.</p><p dir="ltr">The provided raw transport data shows the differential conductance (dI/dV) as a function of the source-drain voltage (Vsd) in various ferroelectric tunnel junctions.</p>