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data from 'Tunnel junctions based on interfacial 2D ferroelectrics'

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Raw transport data of 'Tunnel junctions based on interfacial 2D ferroelectrics'

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posted on 2024-04-24, 15:01 authored by Yunze GaoYunze Gao, Roman Gorbachev, Andrey Kretinin, Vladimir Falko

The documents provided are the raw transport data of figures 2c, 2d, 3a, 3b and 3c of the article 'Tunnel junctions based on interfacial two dimensional ferroelectrics'

This work explores the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. Well-pronounced ambipolar switching behaviour is observed in ferroelectric tunnelling junctions with composite ferroelectric/non-polar insulator barriers and our experimental results are supported with complementary theoretical modelling. Furthermore, the strong dependence of the switching behaviour on the underlying domain structure is revealed: to observe the polarisation reversal, at least one partial dislocation must be present in the device area.

The provided raw transport data shows the differential conductance (dI/dV) as a function of the source-drain voltage (Vsd) in various ferroelectric tunnel junctions.

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