SC
Publications
- Photoluminescence studies of cubic GaN epilayers
- Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
- Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
- High Performance Software in Multidimensional Reduction Methods for Image Processing with Application to Ancient Manuscripts
- Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
- Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells
- Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
- The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers
- Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells
- Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures
- Optical characterisation of nanowire lasers
- Holistic Determination of Optoelectronic Properties using High-Throughput Spectroscopy of Surface-Guided CsPbBr3 Nanowires
- Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)
- Holistic Nanowire Laser Characterization as a Route to Optimal Design
- Bottom-up, chip-scale engineering of low threshold, multi-quantum well microring lasers
- Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers
- High-Throughput Spectroscopy of Geometry-Tunable Arrays of Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier Confinement
- Optical Characterization of Size‐ and Substrate‐Dependent Performance of Ultraviolet Hybrid Plasmonic Nanowire Lasers
- Sub‐Picosecond Carrier Dynamics Explored using Automated High‐Throughput Studies of Doping Inhomogeneity within a Bayesian Framework
- Efficiency droop in zincblende InGaN/GaN quantum wells
- Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework
- Efficiency Droop in Zincblende InGaN/GaN Quantum Wells