We investigated Zn-doped GaAs nanowires grown by Aerotaxy method using high-throughput photoluminescence spectroscopy. We performed a big-data analysis comprising of more than 20,000 nanowires where we applied the Bayesian framework to understand carrier dynamics and reveal a correlation between doping and nanowire diameter. Exploiting the spread in carrier lifetimes, we investigated carrier dynamics at sub-picosecond time scale. Finally, we investigated the impact of doping on the internal quantum efficiency of the nanowire, which is crucial for the performance of many optoelectronic applications.